High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning
نویسندگان
چکیده
High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning R. Loo,* G. Wang,** L. Souriau,** J. C. Lin, S. Takeuchi,* G. Brammertz,* and M. Caymax* IMEC, 3001 Leuven, Belgium Department of Metallurgy and Materials, Department of Physics and Astronomy, and Department of Nuclear and Radiation Physics, Katholieke Universiteit Leuven, 3001 Leuven, Belgium Taiwan Semiconductor Manufacturing Company assignee at IMEC, 3001 Leuven, Belgium
منابع مشابه
Graphene growth on Ge(100)/Si(100) substrates by CVD method
The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide du...
متن کاملDislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.
The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation ...
متن کاملSolid-state reaction-mediated low-temperature bonding of GaAs and BnP wafers to Si substrates
We report a low-temperature wafer bonding method for the realization of integration of GaAsand InP-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding material sandwiched between GaAs and Si wafers, and between InP and Si wafers. The bonding process was carried out at 280-300 “C by taking advantage of the low-temperature solid-sta...
متن کاملBeneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
UNLABELLED We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si depositio...
متن کاملHeteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates
Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions,...
متن کامل